Hybrid mrar array structure and operation

ABSTRACT

This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by combining certain characteristics of these layouts. A single access transistor  16  is used to read the multiple MRAM cells in a segment of a column, which can be stacked vertically above one another in a plurality of MRAM array layers arranged in a “Z” axis direction.

FIELD OF THE INVENTION

The present invention relates to magnetoresistive random access memory(MRAM) devices and, more particularly, to read circuitry for suchdevices.

BACKGROUND OF THE INVENTION

Integrated circuit designers have always sought the ideal semiconductormemory: a device that is randomly accessible, can be written or readvery quickly, is non-volatile, but indefinitely alterable, and consumeslittle power. Magnetoresistive random access memory (MRAM) technologyhas been increasingly viewed as offering all these advantages.

A magnetic memory element has a structure which includes ferromagneticlayers separated by a non-magnetic barrier layer that forms a tunneljunction. Information can be stored as a digital “1” or a “0” asdirections of magnetization vectors in these ferromagnetic layers.Magnetic vectors in one ferromagnetic layer are magnetically fixed orpinned, while the magnetic vectors of the other ferromagnetic layer arenot fixed so that the magnetization direction is free to switch between“parallel” and “antiparallel” states relative to the pinned layer. Inresponse to parallel and antiparallel states, the magnetic memoryelement represents two different resistance states, which are read bythe memory circuit as either a “1” or a “0.” It is the detection ofthese resistance states for the different magnetic orientations thatallows the MRAM to read information.

There are different array architectures that are used within MRAMtechnology to read memory cells. For instance, one architecture used isthe so-called one transistor-one magnetic tunnel junction per cell(“1T-1MTJ”) architecture. This structure is based on a single accesstransistor for controlling read access to a single magnetic memoryelement. Another architecture is the cross-point architecture, where theread operation is performed without using an access transistor tocontrol individual memory cells. This type of system uses row and columnlines set to predetermined voltages levels to read a selected cell. Eachsystem has its advantages and disadvantages. The cross-point system issomewhat slower in reading than the 1T-1MTJ system, as well as being“noisy” during a read operation; however, the cross-point array has theadvantage in that it can be easily stacked for higher density.Additionally, a 1T-1MTJ array is faster, but necessarily less denselyintegrated than a cross-point array because additional space is neededto supply the 1-to-1 access transistor to memory cell ratio.

It would be desirable to have an MRAM read architecture that couldutilize advantages from both the 1T-1MTJ and cross-point architectureswhile minimizing the disadvantages of each.

SUMMARY OF THE INVENTION

This invention provides an MRAM array read architecture whichincorporates certain advantages from both cross-point and 1T-1MTJarchitectures. The fast read-time and high signal-to-noise ratio of the1T-1MTJ architecture and the higher packing density of the cross-pointarchitecture are both exploited in the invention by uniquely combiningcertain characteristics of each. A single access transistor can be usedto operate the reading of multiple vertically stacked column segments ofMRAM cells. In this architecture, the plurality of column segments eachcomprise a plurality of standard MRAM cells which share a common senseline, though each MRAM cell can be read individually.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a two-dimensional cross-sectional view of a portion of an MRAMarray, constructed in accordance with an exemplary embodiment of theinvention;

FIG. 2 is a three-dimensional perspective block diagram of the portionof the MRAM array illustrated in FIG. 1;

FIG. 3 is a block diagram and representational illustration of an MRAMmemory cell showing the interaction between the layers of the cell andperipheral circuitry;

FIG. 4 is a block diagram representation of a processor-based systemincorporating an MRAM device in accordance with the invention.

DETAILED DESCRIPTION

In the following detailed description, reference is made to variousspecific embodiments in which the invention may be practiced. Theseembodiments are described with sufficient detail to enable those skilledin the art to practice the invention, and it is to be understood thatother embodiments may be employed, and that structural and electricalchanges may be made without departing from the spirit or scope of thepresent invention.

The terms “substrate” and “wafer” can be used interchangeably in thefollowing description and may include any semiconductor-based structure.The structure should be understood to include silicon, silicon-oninsulator (SOI), silicon-on-sapphire (SOS), doped and undopedsemiconductors, epitaxial layers of silicon supported by a basesemiconductor foundation, and other semiconductor structures. Thesemiconductor need not be silicon-based. The semiconductor could besilicon-germanium, germanium, or gallium arsenide. When reference ismade to the substrate in the following description, previous processsteps may have been utilized to form regions or junctions in or over thebase semiconductor or foundation.

This invention relates to MRAM technology and new variations on MRAMarray architecture to incorporate certain advantages from bothcross-point and 1T-1MTJ architectures. The fast read-time and highsignal-to-noise ratio of the 1T-1MTJ architecture and the higher packingdensity of the cross-point architecture are both exploited by combiningcertain characteristics of each layout. FIGS. 1-2 illustrate anexemplary embodiment of the invention. The memory cells are fabricatedin array layers 34, where each array layer 34 includes a plurality ofrows and a plurality of columns of cells. Each column is organized intoa plurality of column segments 39. The array layers 34 are verticallystacked, one above another.

In the invention an access transistor 16 is used to control the readingof multiple MRAM cells 38, arranged in column segments 39, one from eacharray layer 34, which are stacked substantially above one another in the“Z” axis direction. In this architecture, each access transistor 16 in atwo-dimensional array in the access transistor layer 12 can be connectedto a substantially vertical stack of a plurality column segments 39 ofMRAM cells 38 arranged substantially over each single access transistor16 so that the plurality of column segments 39 in this “Y-Z” directionwill have their respective sense lines 33 connected together by virtueof a sense line interconnect 32 (explained below). This architecture isrepresented in a two-dimensions in FIG. 1 and in a three-dimensions inFIG. 2. The “X,” “Y,” and “Z” axes are shown in each figures.

Referring again to FIGS. 1-2, a portion of an exemplary MRAM device isshown. FIG. 1 is a two dimensional illustration, while FIG. 2 is a threedimensional depiction of a portion of a memory device containing theinvention. Certain aspects of the invention may be easier to see in oneof FIGS. 1-2. Structures and details unnecessary for an understanding ofthe invention have been omitted for clarity.

FIG. 1 illustrates an access transistor layer 12 formed over asemiconductor substrate 10. The access transistor layer 12 includes atleast a two-dimensional array (in the “X,Y” plane) of access transistors16. As best shown in FIG. 2, the access transistors 16 are arranged overthe substrate 10 along the “X” and “Y” axis directions. It should berecognized that since FIGS. 1-2 only illustrate a portion of an MRAMdevice, there are other access transistors 16 over the substrate in boththe “X” and “Y” axis directions arranged in a similar pattern to thatshown in FIGS. 1-2. Additionally, while FIGS. 1-2 illustrate only twoMRAM cells 38 per column segment 39, each column segment 39 actuallycontains many more MRAM cells 38, e.g., thirty-two MRAM cells.

The access transistors 16 can be typical N-channel MOSFET (metal oxidesemiconductor field effect transistor), though the specific structure ofthe access transistors 16 is not crucial to the invention. Thetransistors 16 include source/drain 14 active areas in the substrate 10.Over the substrate 10, the transistor 16 includes a gate oxide 18, andover this there is typically a polysilicon layer 20 with an overlyingsilicide layer 22, all topped by a nitride cap 24. The polysilicon layer20 and silicide layer 22 together form a control line 23 (that continuesin the “X” axis direction). The sides of the access transistor 16control line 23 are insulated and protected by insulating sidewalls 26,typically made of an oxide or nitride material. Access transistors 16for use in this invention can be fabricated by any techniques well knownto those of skill in the art.

The access transistor layer 12 also includes an insulating dielectriclayer 28 over and around the access transistors 16. Through thisinsulating dielectric layer 28 conductive plugs 30 can be fabricated toconnect to the source/drain regions 14 of the access transistors 16. Theinsulating dielectric 28 can be any material known in the art, such asan oxide or BPSG, and can be formed according to methods well known inthe art. The conductive plugs 30 similarly can be any material wellknown in the art, but preferably are polysilicon or tungsten, and can beformed by known methods. These conductive plugs 30 can serve asconnections for electrically connecting the underlying accesstransistors 16 to the overlying column segments 39 of MRAM cells 38 ofthe MRAM array layers 34, as well as for connection to additionalcircuitry, such as bit lines 31 leading to lines 31 a which are coupledto sense amplifiers 50 used during the reading of the MRAM cells 38. Theconnections between the access transistors 16 and the MRAM array layers34 and the bit lines 31 are typically formed as metal interconnects 36,provided within an insulating material. The metal interconnects 36 andbit lines 31 can be copper, aluminum, or any other metal or otherconductor known as suitable in the art, and can be formed by knownmethods.

As noted, the bit lines 31, which are connected via lines 31 a to thesense amplifier 50, are coupled to the access transistors 16 by themetal interconnects 36 and conductive plugs 30. As shown in FIGS. 1-2,the stacked MRAM array layers 34 form stacked columns of MRAM cells 38.Each column is divided into a plurality of column segments 39, best seenin FIG. 2.

The cells 38 are also arranged in two-dimensional arrays (in the “X,Y”plane) in each layer 34, where each cell 38 is defined at theintersection of a common read/write line 44 and a sense line 33 of acolumn segment, which can be, and generally are, orthogonal to eachother. Each sense line 33 of a column segment 39 in an array 34 isconnected to a plurality of MRAM cells that lie substantially in the “Y”axis direction. The column segment sense lines 33 of the stacked planarlayers 34 are vertically interconnected by a metal interconnect 32.Write only column lines 40 (FIG. 1) are provided in each array 34 toassist in writing memory cells 38 of the column.

Referring to FIG. 3, each MRAM cell 38 includes, at its most basicconfiguration, the read/write common line 44 used for both the readingand writing functions, a magnetic bit 42, a sense line 33 used for thereading function, and a write-only line 40 used for the writingfunction, which is separated from the sense line 33 by an insulatinglayer 46. The magnetic bit 42 includes a free ferromagnetic layer 43, atunnel junction layer 45, and a pinned ferromagnetic layer 41. In thepreferred embodiment, the free ferromagnetic layer 43 is above thepinned ferromagnetic layer 41, which is adjacent the sense line 33;however, it is possible to reverse the location of the pinned and freelayers as is known in the art. In the preferred embodiment, MRAM cells38 sharing a sense line interconnect 32 are in a column segment 39 abovethe access transistor 16 to which it is connected.

The write-only line 40 of the MRAM cell 38 can be composed of conductivematerials as known in the art; the particular combination of materialsmaking up the write-only line is not a critical element of theinvention; however, as an example this line 40 can be copper oraluminum, for instance. The write-only line 40 is insulated from itssurroundings by a dielectric layer 46, which also insulates otherelements of the MRAM cell 38 and the MRAM array layer 34. Though shownin segments associated with the MRAM cells 38 in FIGS. 1-2, thewrite-only lines 40 actually are continuous and travel around the senseline interconnects 32 as shown by the arrows A in FIG. 1.

Shown most clearly in FIG. 3, above the write-only line 40 is the senseline 33, which will be further described below, and the magnetic bit 42,which is in contact with the read/write common line 44. The pinnedferromagnetic layer 41 includes an associated antiferromagnetic layer,such as iron manganese, which keeps the magnetic orientation of thislayer 41 fixed, i.e., “pinned.” The magnetic material of the pinnedferromagnetic layer 41 can be selected from many various materials oralloys with good magnetic properties, such as nickel iron cobalt ornickel iron, for instance. The tunnel junction 45 is a region separatingthe two ferromagnetic layers 41 and 43. The tunnel junction 45 can bemade of many materials, as is known in the art, but the preferredmaterial is aluminum oxide. Over the tunnel junction 45 is the freeferromagnetic layer 43, which can be made of the same materials havingmagnetic properties as the pinned ferromagnetic layer 41. As opposed tothe pinned ferromagnetic layer 41, the free ferromagnetic layer 43 isfree to shift it magnetic orientation for the writing of the MRAM cell38 and has no associated antiferromagnetic layer. The free ferromagneticlayer 43 is in electrical contact with a common read/write line 44.

Referring again to FIGS. 1-2, multiple MRAM array layers 34 are stackedover one another in the “Z” axis direction, thereby increasing thedensity of the MRAM device. Over the uppermost MRAM array layer 34 anitride passivation layer 43 will typically protect the MRAM device.Although four MRAM layers 34 are shown in the drawing, there is norestrictive limit to the number of MRAM array layers 34 of the MRAMdevice of the invention, other than the practicality of physical size ofthe ultimate device.

Each column segment 39 of MRAM cells 38 of each layer 34 has its ownsense line 33, which is connected to each MRAM cell 38 within the samecolumn segment 39. The sense line 33 is also electrically connected tothe sense line interconnect 32, which is itself electrically connectedto the access transistor 16. The sense line 33 can be made of anyconductive material, but is preferably copper or aluminum. The senseline 33 runs above the write-only line 40, separated therefrom by thedielectric 46, and below and in contact with the magnetic bit 42. Inthis architecture a single access transistor 16 would be shared by eachcolumn segment 39 of the MRAM cells 38 in the “Y-Z” planar directionsubstantially above the access transistor 16, as shown in FIGS. 2-3.Thus, each access transistor 16 serves the same column segment 39 ineach of the MRAM layers 34 located over the access transistor 16.

During the write operation an MRAM cell 38 is addressed by thecoinciding activation of the read/write common line 44 and a write-onlyline 40 associated with that cell 38 by peripheral decoding circuitry,and the actual writing of memory is performed as is known in the art asa function of the magnetic field orientations caused by the currentthrough the common read/write line 44 and write only line 40. To readstored information in an MRAM cell 38, the cell 38 is addressed byactivating a read/write line 44 in a row of a layer 34 containing thecell and an associated access transistor 16 via control line 23 (FIG.3). This couples the accessed cell 38 to a sense amplifier 50 whichsenses all resistance and provides a logical signal representing thelogic state stored in the accessed cell. Thus, cell 38 in thethree-dimensional array (as shown in FIGS. 2-3) is addressed for readingin the “X” axis direction by an access transistor 16 coupled to thestacked sense lines 33 of the column segment 39 containing the cell andin the “Y-Z” planar direction and by the read/write common row line 44of one of the planar layers 34.

One major difference between the above described MRAM array and astandard memory array is the use of multiple MRAM array layers 34.Conventional row and column addressing techniques can be used to selectMRAM cells 38 in each array layer 34. Additional address bits are usedto select one of the array layers 34. For the four array layers 34 shownin FIGS. 1-2, this would require two additional address bits which canbe added to the row or column address bits. Once the row or columnaddresses has been received in the MRAM device, they are decoded toactivate an addressed row of an addressed layer, and a column segment(access transistor 16). For example, if the MRAM device is a 16 Mbitarray organized as 2048 rows by 2048 columns by 4 layers, the memorydevice would utilize an 11-bit (2¹¹=2048) row address and a 13-bitcolumn address, with 11 of the 13 bits used for a column segmentselection (2¹¹=2048) and the two remaining column bits used for layerarray 34 selection (2²=4). Thus, the 11-bit row address is decoded by arow decoder 81 (FIG. 3), while the 11-bits of the column address isdecoded by a column decoder 82 (which includes a column segment decoder83) and the 2-bit layer address is decoded by a plane decoder 84.

As illustrated in FIG. 3, the row decoder 81 accepts a row address andproduces a decoded signal R, which is supplied as an input to the layerdecoder 84. The layer decoder 84 also accepts (at least a portion of)the column address and produces a decoded signal RL for selecting a rowand a layer. The column address is also provided to the column decoder82, which includes a column segment decoder 83. The column decoder 82may operate on a set of bits of the column address (e.g., lower addressbits of the column address) while the column segment decoder 83 mayoperate on the remaining bits of the column address (e.g., higheraddress bits of the column address). The column decoder 82 outputs asignal C used to select a column, while the column segment decoder 83output a signal CS which is supplied on control lines 23 to activate oneof the access transistors 16. In order to avoid cluttering the diagramthe signals RL and C are only illustrated in general form with respectto the top layer in FIG. 3, but it should be understood that signals RLand C are supplied to each array layer 34 in a manner to permit aparticular MRAM cell in the array to be addressed.

Once an MRAM cell in the array has been addressed as described above,the addressed cell is coupled to one of the inputs of a sense amplifier50 via the sense lines 33, the sense line interconnect 32, the accesstransistor 16, bit line 31, and one of the lines 31 a. The other inputof the sense amplifier 50 is coupled to another one of the lines 31 a asa reference or a separate reference voltage can be used. The senseamplifier 50 senses the resistance of the selected cell 38 connected toone input of the sense amp 50 using the other input of the sense amp 50as a reference, using any of the methods well known in the art.

The architecture of this invention provides for a transistor driver (theaccess transistor 16) for a reading operation which is located muchcloser to both a selected MRAM cell 38 and between the selected cell 38and the sense amplifier 50 enabling a faster and more reliable readfunction. This produces a higher signal-to-noise ratio during the readfunction than would a conventional cross-point architecture. In thisarrangement, the MRAM three-dimensional array essentially consists of anb 1T-1nMTJ architecture, where n is equal to the number of MRAM cells 38per column segment 39. Accordingly, fewer access transistors 16 arerequired than is needed in the 1T-1MTJ architecture known in the art.

FIG. 4 illustrates an exemplary processing system 900 which may utilizethe memory device 100 of the present invention. The processing system900 includes one or more processors 901 coupled to a local bus 904. Amemory controller 902 and a primary bus bridge 903 are also coupled thelocal bus 904. The processing system 900 may include multiple memorycontrollers 902 and/or multiple primary bus bridges 903. The memorycontroller 902 and the primary bus bridge 903 may be integrated as asingle device 906.

The memory controller 902 is also coupled to one or more memory buses907. Each memory bus accepts memory components 908 which include atleast one MRAM memory device 100 constructed as described above withreference to FIGS. 1-3. The memory components 908 may be a memory cardor a memory module. Examples of memory modules include single inlinememory modules (SIMMs) and dual inline memory modules (DIMMs). Thememory components 908 may include one or more additional devices 909.For example, in a SIMM or DIMM, the additional device 909 might be aconfiguration memory, such as a serial presence detect (SPD) memory. Thememory controller 902 may also be coupled to a cache memory 905. Thecache memory 905 may be the only cache memory in the processing system.Alternatively, other devices, for example, processors 901 may alsoinclude cache memories, which may form a cache hierarchy with cachememory 905. If the processing system 900 include peripherals orcontrollers which are bus masters or which support direct memory access(DMA), the memory controller 902 may implement a cache coherencyprotocol. If the memory controller 902 is coupled to a plurality ofmemory buses 907, each memory bus 907 may be operated in parallel, ordifferent address ranges may be mapped to different memory buses 907.

The primary bus bridge 903 is coupled to at least one peripheral bus910. Various devices, such as peripherals or additional bus bridges maybe coupled to the peripheral bus 910. These devices may include astorage controller 911, an miscellaneous I/O device 914, a secondary busbridge 915, a multimedia processor 918, and an legacy device interface920. The primary bus bridge 903 may also coupled to one or more specialpurpose high speed ports 922. In a personal computer, for example, thespecial purpose port might be the Accelerated Graphics Port (AGP), usedto couple a high performance video card to the processing system 900.

The storage controller 911 couples one or more storage devices 913, viaa storage bus 912, to the peripheral bus 910. For example, the storagecontroller 911 may be a SCSI controller and storage devices 913 may beSCSI discs. The I/O device 914 may be any sort of peripheral. Forexample, the I/O device 914 may be an local area network interface, suchas an Ethernet card. The secondary bus bridge may be used to interfaceadditional devices via another bus to the processing system. Forexample, the secondary bus bridge may be an universal serial port (USB)controller used to couple USB devices 917 via to the processing system900. The multimedia processor 918 may be a sound card, a video capturecard, or any other type of media interface, which may also be coupled toone additional devices such as speakers 919. The legacy device interface920 is used to couple legacy devices, for example, older styledkeyboards and mice, to the processing system 900.

The processing system 900 illustrated in FIG. 4 is only an exemplaryprocessing system with which the invention may be used. While FIG. 4illustrates a processing architecture especially suitable for a generalpurpose computer, such as a personal computer or a workstation, itshould be recognized that well known modifications can be made toconfigure the processing system 900 to become more suitable for use in avariety of applications. For example, many electronic devices whichrequire processing may be implemented using a simpler architecture whichrelies on a CPU 901 coupled to memory components 908 and/or memorydevices 100. These electronic devices may include, but are not limitedto audio/video processors and recorders, gaming consoles, digitaltelevision sets, wired or wireless telephones, navigation devices(including system based on the global positioning system (GPS) and/orinertial navigation), and digital cameras and/or recorders. Themodifications may include, for example, elimination of unnecessarycomponents, addition of specialized devices or circuits, and/orintegration of a plurality of devices.

The above description and accompanying drawings are only illustrative ofexemplary embodiments, which can achieve the features and advantages ofthe present invention. It is not intended that the invention be limitedto the embodiments shown and described in detail herein. The inventioncan be modified to incorporate any number of variations, alterations,substitutions or equivalent arrangements not heretofore described, butwhich are commensurate with the spirit and scope of the invention. Forexample, while the invention has been described within the context ofmemory devices employing MRAM memory cells, other types of memory cellssuch as programmable conductor random access memory (PCRAM) cells mayalso be used with the present invention. The invention is only limitedby the scope of the following claims.

1-32. (canceled)
 33. A method of fabricating a magnetic memory device,comprising: forming a first sense line; forming a first plurality ofmagnetic memory bits, each of said first plurality of magnetic memorybits being formed over, and in electrical contact with, said first senseline; forming a second sense line over said first plurality of magneticmemory bits; forming a second plurality of magnetic memory bits, each ofsaid second plurality of memory bits being formed over, and inelectrical contact with, said second sense line; and forming aninterconnect in electrical contact with said first sense line and saidsecond sense line, wherein said interconnect is in electrical contactwith said first plurality of magnetic memory bits via said first senseline, and wherein said interconnect is in electrical contact with saidsecond plurality of magnetic memory bits via said second sense line. 34.The method of claim 33, further comprising: providing a substrate;forming an access transistor on said substrate, said access transistorhaving a first active area and a second active area; and providing a bitline in electrical contact with said first active area, wherein saidinterconnect is in electrical contact with said second active area. 35.The method of claim 33, wherein the act of forming said first pluralityof magnetic memory bits comprises: forming a plurality of first magneticmemory storage regions over said first sense line; and forming a firstplurality of common lines; wherein each of said first plurality ofcommon lines is formed over one of said plurality of first magneticmemory storage regions.
 36. The method of claim 35, wherein said step offorming said second plurality of magnetic memory bits comprises: forminga plurality of second magnetic memory storage regions over said secondsense line; and forming a second plurality of common lines; wherein eachof said second plurality of common lines is formed over one of saidplurality of second magnetic memory storage regions.
 37. The method ofclaim 33, further comprising forming a first write only line under saidfirst sense line.
 38. The method of claim 37, further comprising forminga second write only line under said second sense line.
 39. The method ofclaim 36, wherein each of said first plurality of common lines is formedorthogonally to said first sense line and wherein each of said secondplurality of common lines is formed orthogonally to said second senseline.
 40. The method of claim 33, wherein each of said first pluralityof magnetic memory bits and each of said second plurality of magneticmemory bits is a programmable conductor variable resistance memoryelement.
 41. A method of fabricating a phase change memory device,comprising: forming a first sense line; forming a first plurality ofphase change memory bits, each of said first plurality of phase changememory bits being formed over, and in electrical contact with, saidfirst sense line; forming a second sense line over said first pluralityof phase change memory bits; forming a second plurality of phase changememory bits, each of said second plurality of memory bits being formedover, and in electrical contact with, said second sense line; andforming an interconnect in electrical contact with said first sense lineand said second sense line, wherein said interconnect is in electricalcontact with said first plurality of phase change memory bits via saidfirst sense line, and wherein said interconnect is in electrical contactwith said second plurality of phase change memory bits via said secondsense line.
 42. The method of claim 41, further comprising: providing asubstrate; forming an access transistor on said substrate, said accesstransistor having a first active area and a second active area; andproviding a bit line in electrical contact with said first active area,wherein said interconnect is in electrical contact with said secondactive area.
 43. The method of claim 41, wherein the act of forming saidfirst plurality of phase change memory bits comprises: forming aplurality of first phase change memory storage regions over said firstsense line; and forming a first plurality of common lines; wherein eachof said first plurality of common lines is formed over one of saidplurality of first phase change memory storage regions.
 44. The methodof claim 43, wherein said step of forming said second plurality of phasechange memory bits comprises: forming a plurality of second phase changememory storage regions over said second sense line; and forming a secondplurality of common lines; wherein each of said second plurality ofcommon lines is formed over one of said plurality of second phase changememory storage regions.
 45. The method of claim 41, further comprisingforming a first write only line under said first sense line.
 46. Themethod of claim 45, further comprising forming a second write only lineunder said second sense line.
 47. The method of claim 44, wherein eachof said first plurality of common lines is formed orthogonally to saidfirst sense line and wherein each of said second plurality of commonlines is formed orthogonally to said second sense line.
 48. The methodof claim 41, wherein each of said first plurality of phase change memorybits and each of said second plurality of phase change memory bits is achalcogenide memory element.
 49. A magnetic memory device, comprising: afirst sense line; a first plurality of magnetic memory bits, each ofsaid first plurality of magnetic memory bits being arranged over, and inelectrical contact with, said first sense line; a second sense linearranged over said first plurality of magnetic memory bits; a secondplurality of magnetic memory bits, each of said second plurality ofmemory bits being arranged over, and in electrical contact with, saidsecond sense line; and an interconnect in electrical contact with saidfirst sense line and said second sense line, wherein said interconnectis in electrical contact with said first plurality of magnetic memorybits via said first sense line, and wherein said interconnect is inelectrical contact with said second plurality of magnetic memory bitsvia said second sense line.
 50. The magnetic memory device of claim 49,further comprising: a substrate; an access transistor arranged on saidsubstrate, said access transistor having a first active area and asecond active area; and a bit line in electrical contact with said firstactive area, wherein said interconnect is in electrical contact withsaid second active area.
 51. The magnetic memory device of claim 49,further comprising: a first plurality of common lines, wherein each ofsaid first plurality of common lines is formed over one of saidplurality of first magnetic memory bits, and a second plurality ofcommon lines, wherein each of said second plurality of common lines isformed over one of said plurality of second magnetic memory bits. 52.The magnetic memory device of claim 51, wherein each of said firstplurality of common lines is arranged orthogonally to said first senseline and wherein each of said second plurality of common lines isarranged orthogonally to said second sense line.
 53. The magnetic memorydevice of claim 49, further comprising a first write only line arrangedunder said first sense line and a second write only line arranged undersaid second sense line.
 54. The magnetic memory device of claim 49,wherein each of said first plurality of magnetic memory bits and each ofsaid second plurality of magnetic memory bits is a programmableconductor variable resistance memory element.
 55. A phase change memorydevice, comprising: a first sense line; a first plurality of phasechange memory bits, each of said first plurality of phase change memorybits being arranged over, and in electrical contact with, said firstsense line; a second sense line arranged over said first plurality ofphase change memory bits; a second plurality of phase change memorybits, each of said second plurality of memory bits being arranged over,and in electrical contact with, said second sense line; and aninterconnect in electrical contact with said first sense line and saidsecond sense line, wherein said interconnect is in electrical contactwith said first plurality of phase change memory bits via said firstsense line, and wherein said interconnect is in electrical contact withsaid second plurality of phase change memory bits via said second senseline.
 56. The phase change memory device of claim 55, furthercomprising: a substrate; an access transistor arranged on saidsubstrate, said access transistor having a first active area and asecond active area; and a bit line in electrical contact with said firstactive area, wherein said interconnect is in electrical contact withsaid second active area.
 57. The phase change memory device of claim 55,further comprising: a first plurality of common lines, wherein each ofsaid first plurality of common lines is formed over one of saidplurality of first phase change memory bits, and a second plurality ofcommon lines, wherein each of said second plurality of common lines isformed over one of said plurality of second phase change memory bits.58. The phase change memory device of claim 57, wherein each of saidfirst plurality of common lines is arranged orthogonally to said firstsense line and wherein each of said second plurality of common lines isarranged orthogonally to said second sense line.
 59. The phase changememory device of claim 55, further comprising a first write only linearranged under said first sense line and a second write only linearranged under said second sense line.
 60. The phase change memorydevice of claim 55, wherein each of said first plurality of phase changememory bits and each of said second plurality of phase change memorybits is a chalcogenide memory element.